to-92 plastic-encapsulate transistors 2sb562 transistor (pnp) features z low frequency power amplifier z complementary pair with 2sd468 maximum ratings (t a =25 unless otherwise noted) parameter value units electric al characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br)cbo i c = - 10 a,i e =0 - 25 v collector-emitter breakdown voltage v (br)ceo i c = -1 ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e = - 10 a,i c =0 -5 v collector cut-off current i cbo v cb = -20 v,i e =0 -1 a emitter cut-off current i ebo v eb = -4 v,i c =0 -1 a dc current gain h fe v ce = -2 v,i c = - 0.5 a 85 240 collector-emitter saturation voltage v ce(sat) i c = -0.8 a,i b = - 0.08 a -0. 5 v base-emitter voltage v be v ce = - 2 v,i c = - 0.5 a -1 v transition frequency f t v ce = -2 v,i c = - 0.5 a 350 mhz collector output capacitance c ob v cb = -10 v,i e =0,f= 1 mhz 38 pf classification of h fe rank b c range 85-170 120-240 to-92 1. emitter 2. collector 3. base symbol parameter value unit v cbo collector-base breakdown voltage -25 v v ceo collector-emitter breakdown voltage -20 v v ebo emitter-base breakdown voltage -5 v i c collector current -continuous -1 a p c collector dissipation 625 mw r ja thermal resistance from junction to ambient 200 /w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
-0 -300 -600 -900 -1200 -1 -10 -100 -1000 -1 -10 -100 -1000 -300 -600 -900 -1200 0 25 50 75 100 125 150 0 125 250 375 500 625 750 -1 -10 -100 -1000 -1 -10 -100 -1000 -1 -10 -100 -1000 10 100 1000 -0.1 -1 -10 1 10 100 -0 -1 -2 -3 -4 -5 -6 -7 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 common emitter v ce = -2v v be i c ?? bese-emmiter voltage v be (mv) collector current i c (ma) t a = 2 5 t a = 1 0 0 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 30 3 -0.3 -3 -300 -30 -3 -300 -30 -3 -300 -30 -3 -300 -3 -30 30 300 2sb562 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = -2v -300 -30 -3 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) -20 common emitter t a =25 -3ma -2.7ma -2.4ma -2.1ma -1.8ma -1.5ma -1.2ma -0.9ma -0.6ma i b = -0.3ma collector current i c (a) collector-emitter voltage v ce (v) static characteristic 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
|
